The main task of the investigation was to perform the synthesis of gallium nitride
nanowires using a low pressure chemical vapor deposition system. The nanowires were grown
via a catalyst-assisted reaction based on the vapor-liquid-solid mechanism. The influence of
catalyst, temperature and pressure on the growth of gallium nitride nanowires was explored.
Optimal results were obtained at a temperature of 750°C
and at a pressure of 400 to
Keywords: gallium nitride; nanowires; chemical vapor deposition; photoluminescence; Raman spectra
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