Gallium oxide β-Ga2O3 crystals were grown by a seedless crystallization from a
Ga2O3-Al2O3 melt. Platelets with (100) orientation
were produced by cleaving of the β-Ga2O3
ingot. These platelets were employed as substrates for GaN deposition by HVPE. Properties
of the β-Ga2O3 crystals and GaN epitaxial layers on β-Ga2O3 substrates were studied.
Keywords: GaN on β-Ga2O3 substrates; GaN deposition by HVPE
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