Mater.Phys.Mech.(MPM)
No 1, Vol. 22, 2015, pages 59-63

GaN GROWTH ON β-Ga2O3 SUBSTRATES BY HVPE

V.I. Nikolaev, A.I. Pechnikov, V.N. Maslov, A.A. Golovatenko,
V.M. Krymov, S.I. Stepanov, N.K. Zhumashev, V.E. Bougrov, A.E. Romanov

Abstract

Gallium oxide β-Ga2O3 crystals were grown by a seedless crystallization from a Ga2O3-Al2O3 melt. Platelets with (100) orientation were produced by cleaving of the β-Ga2O3 ingot. These platelets were employed as substrates for GaN deposition by HVPE. Properties of the β-Ga2O3 crystals and GaN epitaxial layers on β-Ga2O3 substrates were studied.

Keywords: GaN on β-Ga2O3 substrates; GaN deposition by HVPE

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