The paper discussed the results of the study of elastically strained
InGaAlAs/InGaAs/InP heterostructures grown by molecular beam epitaxy as active region for
laser diodes of the spectral range 1510-1580 nm. Structural and optical properties of the
heterostructures were studied by transmission electron microscopy and photoluminescence
techniques. We obtained the dependence of the critical thickness of multiple elastically
strained InGaAs layers separated by InGaAlAs barriers on mole fraction of InAs.
Keywords: InGaAlAs/InGaAs/InP heterostructures; structural properties; optical properties.
full paper (pdf, 1232 Kb)