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Atomic migration and electronic switching of bi-stable centers in conducting filaments
formed in nanooxide based resistive random access memory (RRAM) cells are modeled and
analyzed as competitive mechanisms determining their operation frequency. They are mediated
by the filament growth dynamics. Atomic migration is responsible for a slow change of the
filament resistivity with typical switching times in the millisecond range. Fast switching with the
shortest nanosecond delay can be achieved using bi-stable electronic centers in the filaments.
Possible configurations of such centers are discussed.
Keywords: conductivity switching, memory cell, nanooxide |
full paper (pdf, 1168 Kb)