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The leakage current in the AlGaN Schottky diode under a reverse bias is simulated
and compared within the frameworks of the thermionic emission-diffusion and phononassisted tunneling models. It is shown that the phonon-assisted tunneling model is suitable to
describe the reverse-bias characteristic of the AlGaN Schottky contact and can also be applied
to calculate the gate leakage current in the AlGaN/GaN high electron mobility transistor.
Keywords: leakage current, Schottky diode, thermionic emission, tunneling electron |
full paper (pdf, 848 Kb)