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A study of InxGa1-xAs/GaAs heterostructures with single quantum well (SQW)
carried out by admittance methods demonstrates two competing emission mechanisms for
carriers: thermionic and tunnel. The dependence of thermionic conductance peaks on the
reverse bias has resonance character. We noticed a temperature independent plateau on the
conductance-temperature spectra, which is always related to the tunnel nature. We guess the
observed effect is the resonant tunneling through the two-barrier potential formed at the
QW borders due to doping.
Keywords: admittance, heterostructure, single quantum well, thermionic, tunnel |
full paper (pdf, 1312 Kb)