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Ferroelectric material is generally used in engineering fields for such purposes as
sensors, microelectronics, etc. It also provides more advantages compared to ferromagnetic
materials, especially those related to a memory storage. This is due to a stored memory
produced from magnetic system only consists of 105 bits/cm2 whereas a memory from
ferroelectric can be stored up to 108 bits/cm2.
The objectives of this study were 1) to develop
BST films on Pt (200) / SiO2 / Si (100) substrates and p-type Si (100) substrates using the
chemical solution deposition (CSD) method and 2) to test and study ferroelectric properties,
XRD and SEM / EDS structure of the film produced. The research method used was an
experiment, starting with the making of BST thin films, then ferroelectric tests, SEM / EDAX
tests and XRD tests. The results of ferroelectric test show that all samples have ferroelectric
properties. Therefore, annealing temperature affected a remanent polarization value and the
coercive area of the sample. Regarding a memory application, BST (BAxSR1-xTIO3)1 M
sample with 900œC of annealing temperature is the best material to be used since they have a
high remanent polarization and a low coercive field.
Keywords: annealing, BST, ferroelectric, ferromagnetic |
full paper (pdf, 1200 Kb)