No 1, Vol. 5, 2002 
 

PHYSICAL MECHANISMS OF ENHANCED CONDUCTIVITY IN IRRADIATED
InOx NANAOCRYSTALLINE FILMS

M. Bender1, N. Katsarakis1, G. Kiriakidis1, I.A. Ovid'ko2 and A.B. Reizis2

1 Photonic and Electronic Materials Laboratory, Materials Science Group,
Institute of Electronic Structure and Laser, Foundation for Research and
Technology-Hellas PO Box 1527, Vasilika Vouton, 711 10 Heraklion, Crete, Greece
2 Institute of Problems of Mechanical Engineering,
Russian Academy of Sciences,
Bolshoj 61, Vasil. Ostrov, St. Petersburg, 199178, Russia

Abstract

We present experimental data on the conductivity evolution in InOx nanocrystalline (nano-grained) films after UV light irradiation, and its dependence on film thickness. These experimental data are indicative of new irradiation-induced effects in the nanocrystalline matter and used as input in elaboration of a theoretical model describing physical mechanisms of the UV light irradiation-induced enhancement of the conductivity in nanocrystalline films. In the framework of the model, the experimentally detected peculiarities of InOx nanocrystalline films are attributed to the presence of high-density ensembles of grain boundaries in such films. In particular, the enhancement of conductivity in these films is theoretically described as a phenomenon related to irradiation-induced structural transformations of grain boundaries and ionization, whose intensities are highly sensitive to the film thickness.

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