No 2, Vol. 1, 2000 

InOx Thin Films, Candidates for Novel Chemical and Optoelectronic Applications

G. Kiriakidis, N. Katsarakis, M. Bender, E. Gagaoudakis and V. Cimalla

Institute of Electronic Structure and Laser (IESL), Foundation for Research
and Technology-Hellas (FO.R.T.H), P.O. Box 1527, Heraklion 711 10, Greece
Tel:+30 81 391272, Fax:+30 81 391295, E-mail:


The potentials of InOx microcrystalline thin films for novel chemical and optoelectronic applications are investigated. In particular, these films are candidates for gas sensor applications due to their sensitivity to reactive gas environments such as ozone. This sensitivity is recorded as the result of the variation of the film conductivity level up to six orders of magnitude, which is attributed to the formation of oxygen vacancies. The microcrystalline nature of the films is investigated by X-ray Diffraction (XRD) and Transmission Electron Microscopy (TEM) while film surface characteristics are revealed by Atomic Force Microscopy (AFM). Depth profiling is examined by Auger Electron Spectroscopy (AES) while the stoichiometry of the films is determined by Energy Dispersive X-Ray analysis (EDX). Finally, the photorefractive properties of InOx films as well as their potential for the fabrication of optical gratings for novel telecom and waveguide applications are discussed.

full paper (pdf, 496 Kb)