InOx Thin Films, Candidates for Novel Chemical and Optoelectronic Applications
G. Kiriakidis, N. Katsarakis, M. Bender, E. Gagaoudakis and V. Cimalla
Institute of Electronic Structure and Laser (IESL), Foundation for Research
and Technology-Hellas (FO.R.T.H), P.O. Box 1527, Heraklion 711 10, Greece
Tel:+30 81 391272, Fax:+30 81 391295, E-mail: firstname.lastname@example.org
The potentials of InOx microcrystalline thin films for novel chemical and
optoelectronic applications are investigated. In particular, these films
are candidates for gas sensor applications due to their sensitivity to
reactive gas environments such as ozone. This sensitivity is recorded as
the result of the variation of the film conductivity level up to six orders
of magnitude, which is attributed to the formation of oxygen vacancies.
The microcrystalline nature of the films is investigated by X-ray
Diffraction (XRD) and Transmission Electron Microscopy (TEM) while
film surface characteristics are revealed by Atomic Force Microscopy (AFM).
Depth profiling is examined by Auger Electron Spectroscopy (AES) while
the stoichiometry of the films is determined by Energy Dispersive X-Ray
analysis (EDX). Finally, the photorefractive properties of InOx films as
well as their potential for the fabrication of optical gratings for novel
telecom and waveguide applications are discussed.
full paper (pdf, 496 Kb)