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Effect of enhanced hydrostatic pressure (HP) on oxygen clustering in
as-grown Czochralski silicon (Cz-Si) treated at up to 1000 K - 1.6 GPa
as well as on creation of defects in Cz-Si with SiOx precipitates,
HP treated at 295 K - 2 GPa and at 1580 K - 1 GPa, has been investigated
by infrared spectroscopy, electrical, photoluminescence and related
structure - sensitive methods. Treatment of Cz-Si at (720 - 1000) K
resulted in enhanced generation of oxygen - containing nano -
clusters exhibiting thermal donor activity while the HP treatment
at 295 K and 1580 K - in creation of some additional defects
(non - radiative recombination centres). Above effects are related
to HP - induced creation of nucleation centres for oxygen clustering
in initially "defect free" Cz-Si at (720 - 1000) K and to generation
of nano - defects at the SiOx / Si boundary in Cz-Si containing oxygen
precipitates.
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