Gallium oxide is considered as a perspective functional material for a wide range of
applications. This includes light emitting devices, high power electronics, gas sensors and
catalysts. Investigation of its structural features, particularly, defect structure of the gallium
oxide epitaxial layers is crucial for the high quality devices production technology
development. This work is focused on the investigation of the defect structure of thin epitaxial
layers of (AlхGa1-х)2O3 possessing monoclinic structure
grown by hydride vapor phase epitaxy
on Al2O3 substrates. Some of the observed plane defects, twins and stacking faults, are shown
for the first time.
Keywords: gallium oxide; twins; stacking faults; dislocations; hydride vapor phase epitaxy; tilted domains; transmission electro microscopy.
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