Mater.Phys.Mech.(MPM)
No 2, Vol. 32, 2017, pages 178-185

DEFECTS IN THIN EPITAXIAL LAYERS OF (AlGa1-)2O3 GROWN ON Al2O3 SUBSTRATES

A.V. Kremleva, D.A. Kirilenko, V.I. Nikolaev, A.I. Pechnikov,
S.L. Stepanov, M.A. Odnoblyudov, V.E. Bougrov, A.E. Romanov

Abstract

Gallium oxide is considered as a perspective functional material for a wide range of applications. This includes light emitting devices, high power electronics, gas sensors and catalysts. Investigation of its structural features, particularly, defect structure of the gallium oxide epitaxial layers is crucial for the high quality devices production technology development. This work is focused on the investigation of the defect structure of thin epitaxial layers of (AlGa1-)2O3 possessing monoclinic structure grown by hydride vapor phase epitaxy on Al2O3 substrates. Some of the observed plane defects, twins and stacking faults, are shown for the first time.

Keywords: gallium oxide; twins; stacking faults; dislocations; hydride vapor phase epitaxy; tilted domains; transmission electro microscopy.

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