Single layer antireflection coatings have been studied for optimization InGaAs/InP
photodetector with normal incident light over the 1300-1550-nm wavelength range. Silicon
nitride coatings with various thicknesses were fabricated using plasma enhanced chemical
vapor deposition and inductively coupled plasma chemical vapor deposition. The
antireflection coating with thickness of 200 nm demonstrated reflection below 10 % at
1550 nm wavelength.
Keywords: single layer antireflection coating; silicon nitride coating; InGaAs/InP photodetector.
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