SYNTHESIS OF POROUS SILICON NANOSTRUCTURES FOR PHOTOLUMINESCENT DEVICES
M. Jayachandran, M. Paramasivam, K.R. Murali, D.C. Trivedi and M. Raghavan
Electrochemical Materials Science Division,
Central Electrochemical Research Institute,
Karaikudi-630 006, India
Porous structures were formed on p-Si wafers under various
anodization conditions in ethanolic solutions containing aqueous
hydrofluoric acid. The observed photoluminescence at room temperature
depends on the anodization current density and the anodization time.
Polyaniline (PA) was incorporated into the pores of the porous silicon (PSi)
structure by in-situ electrodeposition. The porous structure formation has
been confirmed using XRD and SEM studies. Current-voltage (I-V)
characteristics of the polyaniline filled PSi (PA/PSi) structure showed the
possibility of using PA as an ohmic contact for PSi based devices.
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