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Results of structural characterization of (AlxGa1-x)2O3
single crystals grown from
the melt with Al content x up to 0.04 are presented. Bulk
(AlxGa1-x)2O3 crystals were grown
by exploring the Czochralski method [1]. Transmission electron microscopy (TEM) was used
to investigate defect structure of the material with various composition, X-ray diffractometry
was used to measure Al content x, to inspect crystallography of the growth facets and to
characterize the structure quality of the samples. Possible types of defects were identified in
the samples with various composition including single dislocations, cracks, and low-angle
misorientation block boundaries. Measured full-width at half-maximum (FWHM) of rocking
curves of 200" confirmed high quality of the grown crystals.
Keywords: Wide-bandgap semiconductor, monoclinic gallium oxide, defect, dislocation, stacking fault, crack |
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