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We propose a technuque of liquid-phase growth of
(AlxGa1-x)2O3 crystals with
variable and controlled Al content in them. When using the Czochralski growth process
Ga2O3 melt was dosed by sapphire seed. By applying of the special growth zone and the
regulating the process parameters, a series of crystal samples with Al content varying from
0.51 to 4.68 % at. was obtained. In addition to the standard setting of the geometry and weight
of the crystals using the process parameters, with an increase of the Al content in the melt, it
is possible to control the color, transparency and crystallinity of the fabricated samples
Keywords: Gallium oxide, sapphire seed, crystal growth, Czochralski process, growth zone, block structure, materials characterization |
full paper (pdf, 976 Kb)