Rev.Adv.Mater.Sci. (RAMS)
No 1/2, Vol. 17, 2008, pages 33-41

TEMPERATURE DEPENDENCE OF SILICON HARDNESS:
EXPERIMENTAL EVIDENCE OF PHASE TRANSFORMATIONS

Vladislav Domnich, Yvonne Aratyn, Waltraud M. Kriven and Yury Gogotsi

Abstract

The hardness of silicon is known to be nearly independent of temperature below a certain transition point, and to decrease steeply thereafter. Using high-temperature Berkovich nanoindentation at 25-500 °C and Raman microanalysis of Vickers indentations produced in single-crystal silicon at 25-750 °C, we present evidence of a transformation into a high-pressure metallic Si phase during indentation at temperatures up to about 350 °C. We show that this transformation pressure determines silicon hardness below the transition temperature. We also report the temperature stability ranges of different metastable phases of silicon, including a new Si-XIII phase.

full paper (pdf, 240 Kb)