| Different techniques for epitaxial growth of gallium nitride and main properties of GaN layers as well as devices made on the base of GaN-structures are described in the review. A new approach to suppression of the dislocation formation process along with reduction of elastic deformation of GaN in the case with gas phase chloride epitaxy on a Si(111) substrate due to application of an additional thin SiC-layer separated from a porous Si-interlayer is discussed. |
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