| The sintering and preparation process of nanoceramic materials is simulated by molecular dynamics (MD) simulation. 3D models of molecular dynamics for crystal planes (100) and (110) of SiC nanoceramic crystal is developed. In the models, the Tersoff potential function is used to simulate the inter-atomic force. In order to investigate the microstructure of nanoceramic with crystal planes (100) and (110) after melting, their melting processes are simulated by rapid-heating. Their characteristics are investigated by analyses of energy evolution, pair correlation function and the graph of instantaneous place of the atoms during melting process. Furthermore, melting processes of SiC with crystal plane (100) are also simulated by different heating rate. The results show that density, energy evolution and melting point of SiC nanoceramic crystal with crystal planes (100) and (110) is different, which indicate anisotropy; during the melting process the higher heating rate, the more energy workpiece needs. |
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