Rev.Adv.Mater.Sci. (RAMS)
No 2, Vol. 27, 2011, pages 184-188

GROWTH MECHANISM OF NANODIMENSIONAL
VANADIUM DIOXIDE ON SILICON SURFACE OBTAINED
BY ML-ALD METHOD

Ol'ga M. Osmolowskaya and Vladimir M. Smirnov

Abstract

Vanadium dioxide nanostructures on silicon were synthesized on silica surface by method molecular - layering atomic layer deposition (ML-ALD). Based on the X-ray diffraction and AFM study, we showed that the structure and morphology of nanosized vanadium dioxide depends on the number of synthesis cycles. The formation scheme for ML-ALD-synthesized vanadium dioxide nanolayers of the definite thickness on silicon surface is proposed. By using X-ray diffraction, spontaneous crystallization effect was discovered for amorphous vanadium dioxide layer on silicon surface. All crystallites are oriented along the support surface. While increasing number of ML-ALD cycles, the crystallites with more symmetrical lattice are formed. So, 20 cycles of ML-ALD in combination with higher treatment temperature promote change in surface relief of vanadium dioxide.

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