Rev.Adv.Mater.Sci. (RAMS)
No 3, Vol. 15, 2007, pages 253-258

SIMS DEPTH PROFILING OF THIN NITRIDE- AND CARBIDE-BASED FILMS FOR HARD COATING

M. Cwil, P. Konarski, W. Gulbiński and V.V. Uglov

Abstract

Secondary ion mass spectrometry (SIMS) with argon ion beam has been used to determine the depth profile of thin (Ti,Cr) nitride- and carbide-based multilayered hard coatings deposited on stainless or carbon steel substrates. The aim of the study is to show advantage of the SIMS method for elemental depth profiling and characterization of impurities in such thin systems. We discuss the matrix effects in SIMS analysis, particularly oxygen influence on the main elements detection in the films, and ion mass interference observed for positive and negative analysis of the Cr(N,C) multilayers. The use of a low energy beam sputtering in conjunction with detection of molecular ions is proposed for monitoring of the multilayered CrN/CrC films. The profile of (28Si12C2)- accomplished by a ultra-low energy of the beam provides accurate distribution of Si dopant in the TiC material indicating the SiC film creation on the top of the coating with the thickness of about 500 nm. The depth profiles of the (Ti,Cr)N coatings show higher oxygen contamination in the case of TiN layers than in the CrN, while higher nitrogen concentration was recorded in the chromium nitride matrix. Furthermore, Auger study of the investigated structures provides additional information on quantitative distribution of main components in the coating films.

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