Направление: «Разработка фундаментальных принципов образования новой фазы в многокомпонентных системах с целью создания управляемого синтеза новых материалов и гетероструктур на основе широкозонных полупроводников и диэлектриков  для микро, нано - и оптоэлектроники», научн. руководитель - проф., докт. физ.-мат. наук С.А. Кукушкин

Полноформатные статьи, индексируемые в базах Web of Science и/или Scopus, опубликованные в рамках данного направления (с 2011 года):

 

1. G.V. Benemanskaya, S.А. Kukushkin, P.A. Dementev, M.N. Lapushkin, .S.N. Timoshnev, D.V. Smirnov (2018) Synchrotron-based photoemission study of electronic structure of the Cs/GaN ultrathin interface. Solid State Communications 271:6-10. (link)

2. A.V. Osipov, A.S. Grashchenko, S.A. Kukushkin, V.I. Nikolaev, E.V. Osipova, A.I. Pechnikov, I.P. Soshnikov (2018) Structural and elastoplastic properties of β-Ga2O3 films grown on hybrid SiC/Si substrates. Continuum Mech. Thermodyn. 30 :1059–1068. DOI: 10.1007/s00161-018-0662-6 (link)

3. V.V. Kidalov, S.A. Kukushkin, A.V. Osipov, A.V. Redkov, A.S. Grashchenko, I.P. Soshnikov, M.E. Boiko, M.D. Sharkov, A.F. Dyadenchuk (2018) Properties of SiC films obtained by the method of substitution of atoms on porous silicon. ECS journal of solid state science and technology 7:158-160. DOI: 10.1149/2.0061804jss  (link)

4. V.V. Kidalov, S.A. Kukushkin, A.V. Osipov, A.V. Redkov, A.S. Grashchenko, I.P. Soshnikov, M.E. Boiko, M.D. Sharkov, A.F. Dyadenchuk (2018) Growth of SiC films by the method of substitution of atoms on porous Si (100) and (111) substrates. Materials Physics and Mechanics 36:39-52. DOI: 10.18720/MPM.3612018_4. (link)

5. S.A. Kukushkin, A.M. Mizerov, A.V. Osipov, A.V. Redkov, S.N. Timoshnev (2018) Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effect of SiC and polarity issues. Thin solid films 646:158-162. DOI: 10.1016/j.tsf.2017.11.037.  (link)

6. G.E. Cirlin, R.R. Reznik, I.V. Shtrom, A.I. Khrebtov, Yu.B. Samsonenko, S.A. Kukushkin, T. Kasama, N. Akopian, L. Leonardo (2018) Hybrid GaAs/AlGaAs nanowire — quantum dot system for single photon sources. Semiconductors 52:462–464. DOI: 10.1134/S1063782618040103. (link)

7. Kalinkin, I.P., Kukushkin, S.A. & Osipov, A.V. (2018) Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution. Semiconductors 52:802-808. DOI:10.1134/S1063782618060118 (link)

8. Grashchenko A.S., Kukushkin S.A., Osipov A.V., Osipova E.V., Soshnikov I.P., Nikolaev V.I.   (2018) Study of the anisotropic elastoplastic properties of β-GA2O3 films synthesized on SIC/SI substrates. Physics of the Solid State 60(5):852-857. DOI: 10.1134/S1063783418050104 (link)

9. R.R. Reznik, K.P. Kotlyar, I.P. Soshnikov, S.A. Kukushkin, A.V. Osipov, G.E. Cirlin (2018) MBE growth and structural properties of InAs and InGaAs nanowires with different mole fraction of In on Si and strongly mismatched SiC/Si(111) substrates. Semiconductors 52:651–653. DOI: 10.1134/S1063782618050251.  (link)

10. S A Kukushkin, A V Osipov (2018) Mechanisms of epitaxial growth of SiC films by the method of atom substitution on the surfaces (100) and (111) of Si single crystals and on surfaces of Si films grown on single crystals Al2O3. IOP Conf. Series: Materials Science and Engineering 387:012044. DOI: 10.1088/1757-899X/387/1/012044  (link)

11. Kukushkin S.A., Osipov A.V. (2018) Mechanism of formation of carbon–vacancy structures in silicon carbide during its growth by atomic substitution. Physics of the Solid State 60(9):1891-1896. DOI: 10.1134/S1063783418090184 (link)

12. Kitaev, Y.E., Kukushkin, S.A., Osipov, A.V. A. V. Redkov (2018) A New Trigonal (Rhombohedral) SiC Phase: Ab Initio Calculations, a Symmetry Analysis and the Raman Spectra Phys. Solid State 60(10):2066-2071. DOI:10.1134/S1063783418100116 (link)

13. V.V. Kidalov, S.A. Kukushkin, A.V. Osipov, A.V. Redkov,  A. S. Grashchenko, I.P. Soshnikov5,6, M.E.Boiko, M.D.Sharkov, A.F. Dyаdenchuk (2018) Heteroepitaxy Growth of SiC on the Substrates of Porous Si Method of Substitution of Atoms. Journal of Nano- and Electronic Physics 10 :03026-03031. DOI: 10.21272/jnep.10(3).03026 (link)

14. S.A. Kukushkin, Sh.Sh. Sharofidinov, A.V. Osipov, A.V. Redkov, V.V. Kidalov, A.S. Grashchenko, I.P. Soshnikov, A.F. Dydenchuk (2018) The Mechanism of Growth of GaN Films by the HVPE Method on SiC Synthesized by the Substitution of Atoms on Porous Si Substrates. ECS Journal of Solid State Science and Technology 7:480-486. DOI: 10.1149/2.0191809jss. (link)

15. V.N. Bessolov, A. Zubkova, E.V. Konenkova, S. Konenkov, S.A. Kukushkin, T. Orlova, S. Rodin, V.P. Rubets, D. Kibalov, V. Smirnov (2018) Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano-Patterned SiC/Si(100) Template. Phys. Status Solidi B :1800268. DOI: 10.1002/pssb.201800268. (link)

16. Antipov V.V., Kukushkin S.A., Osipov A.V. (2017) Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer. Physics of the Solid State. 2017. Т. 59. № 2. С. 399-402. DOI: 10.1134/S1063783417020020. (link)

17. S.A. Kukushkin, A.V. Osipov, I.P. Soshnikov (2017) Growth of epitaxial SiC layer on Si (100) surface of n- and p-type of conductivity by the atoms substitution method. Reviews on Advanced Materials Science 52:29-42. (link)

18. G.E. Cirlin, R.R. Reznik, I.V. Shtrom, A.I. Khrebtov. I.P. Soshnikov, S.A. Kukushkin, L. Leandro, T. Kasama, N. Akopian (2017) AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates. J. Phys. D: Appl. Phys. 50(48):484003. DOI: 10.1088/1361-6463/aa9169. (link)

19. E.S. Babich, A.V. Redkov, I.V. Reduto, S.A. Scherbak, A.N. Kamenskii, A.A. Lipovskii (2017) Raman enhancement by individual silver hemispheroids. Applied Surface Science 397:119-124. DOI: 10.1016/j.apsusc.2016.11.127. (link)

20. Sh.Sh. Sharofidinov, A.V. Redkov, A.V. Osipov, S.A. Kukushkin (2017) GaN growth via HVPE on SiC/Si substrates: growth mechanisms. Journal of Physics: Conf. Series 917:032028(1-5). DOI: 10.1088/1742-6596/917/3/032028. (link)

21. S.A. Kukushkin, A.V. Osipov (2017) Quantum mechanical theory of epitaxial transformation of silicon to silicon carbide. J. Phys. D: Appl. Phys 50(46):464006. DOI: 10.1088/1361-6463/aa8f69 (link)

22. G.V. Benemanskay, P.A. Dementev, S.А. Kukushkin, M.N. Lapushkin, A.V. Osipov, S.N. Timoshnev (2017) Carbon-based nanostructure created by Ba and Cs atomic layer deposition on the vicinal 3C-SiC(111) surfaces. Materials Physics and Mechanics 32:108-116. DOI: 10.18720/MPM.3222017_2. (link)

23. R.R. Reznik, K.P. Kotlyar, I.V. Shtrom, I.P. Soshnikov, S.A. Kukushkin, A.V. Osipov, G.E. Cirlina (2017) MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate. Semiconductors 51(11):1472–1476. DOI: 10.1134/S1063782617110252. (link)

24. S.A. Kukushkin, A.M. Mizerov, A.V. Osipov, A.V. Redkov, R.S. Telyatnik, S.N. Timoshnev (2017) Effect of SiC buffer layer on GaN growth on Si via PA-MBE. Journal of Physics: Conf. Series 917:032038. DOI: 10.1088/1742-6596/917/3/032038. (link)

25. S.A. Grudinkin, S.A. Kukushkin, A.V. Osipov, N.A. Feoktistov (2017) IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide. Physics of the Solid State 59(12):2430–2435. DOI: 10.1134/S1063783417120186. (link)

26. A.S. Grashchenko, S.A. Kukushkin, A.V. Osipov, N.A. Feoktistov (2017) Dependencies of photoelectric properties of SiC/Si structures grown by the method of atoms substitution on synthesis time. J.Phys.: Conf. Ser. 872:012030(1-4). DOI :10.1088/1742-6596/872/1/012030. (link)

27. S.A. Kukushkin, K.Kh. Nussupov, A.V. Osipov, N.B. Beisenkhanov, D.I. Bakranova (2017) Structural properties and parameters of epitaxial silicon carbide films, grown by atomic substitution on the highresistance (111) oriented silicon. Superlattices and Microstructures 111:899-911. DOI: 10.1016/j.spmi.2017.07.050. (link)

28. M.M. Rozhavskaya, S.A. Kukushkin, A.V. Osipov, A.V. Myasoedov, S.I. Troshkov, L.M. Sorokin, P.N.Brunkov, A.V. Baklanov, R.S. Telyatnik, R.R. Juluri, K.B. Pedersen, V.N. Popok (2017) Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution. Phys. Status Solidi A 214(10):1700190. DOI: 10.1002/pssa.201700190. (link)

29. S.A. Kukushkin, A.V. Osipov (2017) The Gorsky effect in the synthesis of silicon-carbide films from silicon by topochemical substitution of atoms. Technical Physics Letters 43(7):633–636. DOI: 10.1134/S1063785017070094. (link)

30. V.N. Bessolov, A. Kalmykova, S. Konenkov, E.V. Konenkova, S.A. Kukushkin, A. Myasoedov, A.V. Osipov, V. Panteleev (2017) Semipolar AlN on Si(100): technology and properties. Microelectronic Engineering 178:34–37. DOI: 10.1016/j.mee.2017.04.047. (link)

31. V.N. Bessolov, A. Kalmykov, E.V. Konenkova, S.A. Kukushkin, A. Myasoedov, N. Poletaev, S. Rodin (2017) Semipolar AlN and GaN on Si(100): HVPE technology and layer properties. Journal of Crystal Growth 457:202-206. DOI: 10.1016/j.jcrysgro.2016.05.025. (link)

32. I.P. Pronin, S.A. Kukushkin, V.V. Spirin, S.V. Senkevich, E.Yu. Kaptelov, D.M. Dolgintsev, V.P. Pronin, D.A. Kiselev, O.N. Sergeeva (2017) Formation mechanisms and the orientation of self-polarization in PZT polycristalline thin films. Materials Physics and Mechanics 30:20-34. (link)

33. S.A. Kukushkin, A.V. Osipov (2017) Drift mechanism of mass transfer on heterogeneous reaction in crystalline silicon substrate. Physica B: Condensed Matter 512:26–31. DOI: 10.1016/j.physb.2017.02.018. (link)

34. S.A. Kukushkin, and A.V. Osipov (2017) A quantum-mechanical model of dilatation dipoles in topochemical synthesis of silicon carbide from silicon. Physics of the Solid State 59(6):1238–1241. DOI: 10.1134/S1063783417060130. (link)

35. S.A. Kukushkina, K.Kh. Nussupov, A.V. Osipov, N.B. Beisenkhanov, D.I. Bakranova (2017) X-Ray reflectometry and simulation of the parameters of SiC epitaxial films on Si(111), grown by the atomic substitution method. Physics of the Solid State 59(5):1014–1026. DOI: 10.1134/S1063783417050195. (link)

36. V.K. Egorov, E.V. Egorov, S.A. Kukushkin, A.V. Osipov (2017) Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide. Physics of the Solid State 59(4):773–779. DOI: 10.1134/S1063783417040072. (link)

37. S.A. Kukushkin, A.V. Osipov, V.N. Bessolov, E.V. Konenkova, V.N. Panteleev (2017) Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates. Physics of the Solid State 59(4): 36–43. DOI: 10.1134/S1063783417040114. (link)

38. A.S. Grashchenko, N. A. Feoktistov, A.V. Osipov, E.V. Kalinina, S.A. Kukushkin (2017) Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice. Semiconductors 51(5):621–627. DOI: 10.1134/S1063782617050086. (link)

39. S.A. Kukushkin, A.V. Osipov, A.V. Red’kov (2017) Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types. Semiconductors 51(3):396–401. DOI: 10.1134/S1063782617030149. (link)

40. V.V. Antipov, S.A. Kukushkin, A.V. Osipov (2017) Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer. Physics of the Solid State 59(2):399–402. DOI: 10.1134/S1063783417020020. (link)

41. A.S. Grashchenko, S.A. Kukushkin⁠, A.V. Osipov⁠⁠, ⁠A.V. Redkov (2017) Nanoindentation of GaN/SiC thin films on silicon substrate. J. Phys. Chem. Solids 102:151-156. DOI: 10.1016/j.jpcs.2016.11.004. (link)

42. Yu.E. Kitaev, S.A. Kukushkin, A.V. Osipov (2017) Evolution of intermediate phase and their phonon spectra during the topochemical conversion of silicon into silicon carbide. Physics of the Solid State 59(1):30–35. DOI: 10.1134/S1063783417010164. (link)

43. R.S. Telyatnik (2016) Numerical approximations of green’s functions for elastic anisotropic media by spherical harmonics, interaction energies of point defects. Materials Physics and Mechanics 27:98-107. (link)

44. A.V. Redkov, A.A. Lipovskii, D.K. Tagantsev (2016) Micro Raman spectroscopy study of glass ceramics with gradient of volume fraction of crystalline phase. Journal of the American Ceramic Society 99(8):2558-2560. DOI: 10.1111/jace.14368. (link)

45. A.V. Redkov, A.A. Lipovskii, M. Dussauze, M. Paraillous, T. Cardinal (2016) Nanoscale self-arranged layers of silver nanoparticles in glass. Chemical Physics Letters, 652, 235-238. DOI: 10.1016/j.cplett.2016.04.016 (link)

46. I.S. Núñez, M.G. Shlyagin, S.A. Kukushkin (2016) Nucleation of nanopores in glass optical fibers under influence of tensile stress: Experiment. Materials Physics and Mechanics 29:125-132. (link)

47. A.V. Redkov, A.V. Osipov, S.A. Kukushkin (2016) Evolution of crystal morphology under flow of low-energy particles: vacancy mechanism. Materials Physics and Mechanics 29:82-92. (link)

48. R.S. Telyatnik, A.V. Osipov, S.A. Kukushkin. (2016) Ab initio modelling of nonlinear elastoplastic properties of diamond-like C, SiC, Si, Ge crystals upon large strains. Materials Physics and Mechanics 29:1-16. (link)

49. G.V. Benemanskaya, P.A. Dementev, S.A. Kukushkin, M.N. Lapushkin, A.V. Osipov, S.N. Timoshnev (2016) Photoemission Studies of the Vicinal SiC (100) 4⁰ Surface and the Cs/SiC/(100) 4° Interface. Technical Physical Letters 42(12):1145–1148. DOI: 10.1134/S1063785016120026. (link)

50. A.V.Osipov, S.A. Kukushkin, A.V. Luk’yanov (2016) Topochemical Synthesis of Epitaxial Silicon Carbide on Silicon. International Journal of Chemical, Molecular, Nuclear, Materials and Metallurgical Engineering 10(11):1286-1289. (link)

51. G.V. Benemanskaya, P.A. Dementev, S.A. Kukushkin, M.N. Lapushkin, A.V. Osipov, B.V. Senkovskiy (2016) The C 1s Core Level Spectroscopy of Carbon Atoms at the Surface SiC/Si(111)-4° Layer and Cs/SiC/Si(111)-4° Interface. Semiconductors 50(10)1327–1332. DOI: 10.1134/S1063782616100080. (link)

52. R.R. Reznik, K.P. Kotlyar, I.V. Ilkiv, I.P. Soshnikov, S.A. Kukushkin, A.V. Osipov, E.V. Nikitina, G.E. Cirlin (2016) The use of SiC/Si(111) hybrid substrate for MBE growth of GaN nanowires. Journal of Physics: Conference Series 741(1):012027. DOI: 10.1088/1742-6596/741/1/012027. (link)

53. A.V. Redkov, A.V. Osipov, I.S. Mukhin, S.A. Kukushkin. (2016) Separation of stress-free AlN/SiC thin films from Si substrate. Journal of Physics: Conference Series 741(1):012034. DOI: 10.1088/1742-6596/741/1/012034 (link)

54. R.R. Reznik, K.P. Kotlyar, I.V. Il’kiv, I.P. Soshnikov, S.A. Kukushkin, A.V. Osipov, E.V. Nikitina, G.E. Cirlin (2016) Growth and Optical Properties of Filamentary GaN Nanocrystals Grown on a Hybrid SiC/Si(111) Substrate by Molecular Beam Epitaxy. Physics of the Solid State 58(10):1952–1955. DOI: 10.1134/S1063783416100292 (link)

55. S.A. Kukushkin, V.I. Nikolaev, A.V. Osipov, E.V. Osipova, A.I. Pechnikov, N.A. Feoktistov (2016) Epitaxial Gallium Oxide on a SiC/Si Substrate. Physics of the Solid State 58(9):1876–1881. DOI: 10.1134/S1063783416090201 (link)

56. S.A. Kukushkin, A.V. Osipov, A.I. Romanychev (2016) Epitaxial Growth of Zinc Oxide by the Method of Atomic Layer Deposition on SiC/Si Substrates. Physics of the Solid State 58(7):1448–1452. DOI: 10.1134/S1063783416070246 (link)

57. V.N. Bessolov, D.V. Karpov, E.V. Konenkova, A.А. Lipovskii, A.V. Osipov, A.V. Redkov, I.P. Soshnikov, S.A. Kukushkin (2016) Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate. Thin Solid Films 606:74-79. DOI: 10.1016/j.tsf.2016.03.034 (link)

58. A.V. Redkov, A.V. Osipov, S.A. Kukushkin. (2016) Molecular Dynamics Simulation of the Indentation of Nanoscale Films on a Substrate. Technical Physics Letters 42(6): 639–643. DOI: 10.1134/S1063785016060274 (link)

59. S.A. Kukushkin, A.V. Osipov, R.S. Telyatnik (2016) Elastic interaction of point defects in cubic and hexagonal crystals. Physics of the Solid State 58(5):971-980. DOI: 10.1134/S1063783416050140 (link)

60. S.A. Kukushkin, A.V. Osipov, O.N. Sergeeva, D.A. Kiselev, A.A. Bogomolov, A.V. Solnyshkin, E.Yu. Kaptelov, S.V. Senkevich, I.P. Pronin (2016) Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate. Physics of the Solid State 58(5): 967-970. DOI: 10.1134/S1063783416050139 (link)

61. G.V. Benemanskaya, P.A. Dementev, S.A. Kukushkin, M.N. Lapushkin, B.V. Senkovskiy, S.N. Timoshnev (2016) Induced surface states of the ultrathin Ba/3C-SiC (111) interface. Semiconductors 50(4):457-461. DOI: 10.1134/S1063782616040072 (link)

62. A.S. Kukushkin, A.V. Osipov (2016) Determining polytype composition of silicon carbide films by UV ellipsometry. Technical Physics Letters 42(2):175-178. DOI: 10.1134/S1063785016020280 (link)

63. S.A. Kukushkin, A.V. Osipov (2016) Phase equilibrium in the formation of silicon carbide by topochemical conversion of silicon. Physics of the Solid State 58(4): 747-751. DOI: 10.1134/S1063783416040120 (link)

64. V.V. Antipov, S.A. Kukushkin, A.V. Osipov (2016) Epitaxial growth of cadmium sulfide films on silicon. Physics of the Solid State 58(3): 629-632. DOI: 10.1134/S1063783416030033. (link)

65. S.А. Kukushkin, G.V. Benemanskaya, P.A. Dementev, S.N. Timoshnev, B. Senkovskiy (2016) Synchrotron-radiation photoemission study of the ultrathin Ba/3C-SiC(111) interface. Journal of Physical and Chemistry of Solids 90, 40-44. DOI: 10.1016/j.jpcs.2015.10.018 (link)

66. S.A. Kukushkin, A.V. Osipov (2015) The equilibrium state in the Si-O-C ternary system during SiC growth by chemical substitution of atoms. Technical Physics Letters 41(3):259-262. DOI 10.1134/S1063785015030244. (link)

67. A.V. Tumarkin, S.A. Kukushkin, A.V. Osipov, A.S. Ankudinov, A.A. Odinets (2015) Role of elastic energy in the formation of ferroelectric barium strontium titanate films on sapphire. Physics of the Solid State 57(4):815-819. DOI: 10.1134/S1063783415040307. (link)

68. G.V. Benemanskaya, P.A. Dementev, S.А. Kukushkin, M.N. Lapushkin, A.V. Osipov, B. Senkovskiy, S.N. Timoshnev (2015) Photoemission Study of nano SiC Epitaxial layers synthesized by a New method of the Atom Substitution in Si Crystal lattice. Materials Physics and Mechanics 22(2):183-190. (link)

69. O.N. Sergeeva, A.A. Bogomolov, A.V. Solnyshkin, N.V. Komarov, S. A. Kukushkin, D.M. Krasovitsky, A.L. Dudin, D.A. Kiselev, S.V. Ksenich, S.V. Senkevich, E.Yu. Kaptelov and I.P. Pronin (2015) SEM, Dielectric, Pyroelectric, and Piezoelectric Response of Thin Epitaxial AlN Films Grown on SiC/Si Substrate. Ferroelectrics 477(1):121-130. DOI 10.1080/00150193.2015.1000144. (link)

70. A.S. Grashchenko, S.A. Kukushkin, A.V. Osipov. (2015) Microhardness study of two-layer nanostructures by a nanoindentation method. Materials Physics and Mechanics 24(1), 35-40. (link)

71. S.A. Kukushkin, A.V. Osipov, M.M. Rozhavskaya, A.V. Myasoedov, S.I. Troshkov, V.V. Lundin, L.M. Sorokin, A.F. Tsatsul’nikov (2015) Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN. Physics of the Solid State 57(9):1899-1907. DOI: 10.1134/S1063783415090218. (link)

72. V.N. Bessolov, A.S. Grashchenko, E.V. Konenkova, A.V. Myasoedov, A.V. Osipov, A.V. Red’kov, S.N. Rodin, V.P. Rubets, S.A. Kukushkin (2015) Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN. Physics of the Solid State 57(10):1966-1971. DOI: 10.1134/S1063783415100042. (link)

73. N.A. Feoktistov, S.A. Grudinkin, V.G. Golubev, M.A. Baranov, K.V. Bogdanov, S.A. Kukushkin (2015) Evolution of the morphology of diamond particles and mechanism of their growth during the synthesis by chemical vapor deposition. Physics of the Solid State 57(11):2184-2190. DOI: 10.1134/S1063783415110104. (link)

74. S.A. Grudinkin, V.G. Golubev, A.V. Osipov, N.A. Feoktistov, S.A. Kukushkin (2015) Infrared spectroscopy of silicon carbide layers synthesized by the substitution of atoms on the surface of single-crystal silicon. Physics of the Solid State 57(12):2543-2549. DOI: 10.1134/S1063783415120136. (link)

75. A.V. Redkov, A.V. Osipov, S.A. Kukushkin (2015) Stability of the surface of an elastically strained multicomponent film in a system with chemical reactions. Physics of the Solid State 57(12):2524-2531. DOI: 10.1134/S106378341512029X. (link)

76. G.V. Benemanskaya, M.N.Lapushkin, S.N.Timoshnev, A.V.Nelubov (2015) Synchrotron radiation photoemission study of the ultrathin Cs/InN interface. Solid State Communications 217:34–37. DOI: 10.1016/j.ssc.2015.05.008. (link)

77. A.V. Redkov, S.A. Kukushkin, A.V. Osipov (2015) Surface defects formation on strained thin films growing via chemical reaction: a model. Journal of Physics: Conference Series 643(012005). DOI: 10.1088/1742-6596/643/1/012005. (link)

78. R.S. Telyatnik, A.V. Osipov, S.A. Kukushkin (2015) Pore- and delamination-induced mismatch strain relaxation and conditions for the formation of dislocations, cracks, and buckles in the epitaxial AlN(0001)/SiC/Si(111) heterostructure. Physics of the Solid State 57(1):162-172. DOI: 10.1134/S106378341501031X. (link)

79. L.M. Sorokin, A.V. Myasoedov, A.E. Kalmykov, D.A. Kirilenko, V.N. Bessolov, S.A. Kukushkin (2015) TEM investigation of semipolar GaN layers grown on Si(001) offcut substrates. Semicond. Sci. Technol. 30:114002-114008. DOI: 10.1088/0268-1242/30/11/114002. (link)

80. S.A. Kukushkin, A.V. Lukyanov, A.V. Osipov, N.A. Feoktistov (2014) Epitaxial silicon carbide on a 6″ silicon wafer. Technical Physics Letters 40(1):36-39. DOI: 10.1134/S1063785014010088. (link)

81. S.A. Kukushkin, A.V. Osipov (2014) First-order phase transition through an intermediate state. Physics of the Solid State 56(4):792-800. DOI: 10.1134/S1063783414040143. (link)

82. S.A. Kukushkin, A.V. Osipov. (2014) A new method of replacement atoms for the synthesis of epitaxial layers of SiC on Si: From theory to practice. Journal of Physics: Conference Series 541(012003):1-9. (link)

83. V.N. Bessolov, E.V. Konenkova, S.A. Kukushkin, A.V. Myasoedov, A.V. Osipov, S.N. Rodin, M.P. Shcheglov, N.A. Feoktistov (2014) Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer. Technical Physics Letters 40(5):386-388. DOI: 10.1134/S1063785014050046 (link)

84. V.N. Bessolov, E.V. Konenkova, S.A. Kukushkin, A.V. Myasoedov, S.N. Rodin, A.V. Osipov, M.P. Shcheglov (2014) Semipolar GaN on Si (001): The role of SiC buffer layer synthesized by method of substrate atom substitution. Materials Physics and Mechanics 21(1):71-77. (link)

85. S.A. Kukushkin, A.V. Osipov, A.V. Redkov (2014) Morphological stability criterion for a spherical crystallization front in a multicomponent system with chemical reactions. Physics of the Solid State 56(12):2530-2536. DOI: 10.1134/S106378341412018X. (link)

86. A.S. Grashchenko, S.A. Kukushkin, A.V. Osipov (2014) Nanoindentation and deformation properties of nanoscale silicon carbide films on silicon substrate. Technical Physics Letters 40(12):1114-1116. DOI: 10.1134/S1063785014120268. (link)

87. S.A. Kukushkin, A.V. Osipov, N.A. Feoktistov (2014) Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review. Physics of the Solid State 56(8):1507-1535. DOI: 10.1134/S1063783414080137. (link)

88. S.A. Kukushkin, A.V. Osipov (2014) Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films. J. of Phys. D: Appl. Phys. 47:313001-313041. DOI: 10.1088/0022-3727/47/31/313001. (link)

89. V.N. Bessolov, E.V. Konenkova, S.A. Kukushkin, A.V. Osipov, S.N. Rodin (2014) Semipolar gallium nitride on silicon: technology and properties. Rev. Adv. Mater. Sci. 38:75-93. (link)

90. S.A. Kukushkin, A.V. Osipov (2013) A new mechanism of elastic energy relaxation in heteroepitaxy of monocrystalline films: Interaction of point defects and dilatation dipoles. Mechanics of Solids 48(2):216-227 (link)

91. V.N. Bessolov, E.V. Konenkova, S.A. Kukushkin, V.I. Nikolaev, A.V. Osipov, Sh. Sharofidinov, M.P. Shcheglov (2013) Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate. Technical Physics Letters 39(3):274-276. DOI: 10.1134/S106378501303019X. (link)

92. S.A. Kukushkin, A.V. Osipov, D.B. Vcherashnii, S.A. Obukhov, N.A. Feoktistov (2013) Carrier mobility in undoped SiC layers grown on silicon by a new epitaxial technique. Technical Physics Letters 39(5):488-491. DOI: 10.1134/S1063785013050234. (link)

93. V. Bessolov, E. Konenkova, M. Shcheglov, S. Sharofidinov, S. Kukushkin, A. Osipov, V. Nikolaev (2013) HVPE growth of GaN in the semipolar direction on planar Si(210). Physica status solidi C 10(3):433–436. DOI: 10.1002/pssc.201200566. (link)

94. S.A. Kukushkin, A.V. Osipov (2013) A new method for the synthesis of epitaxial layers of silicon carbide on silicon owing to formation of dilatation dipoles. J. Appl. Phys 113:024909. DOI: 10.1063/1.4773343. (link)

95. S.A. Kukushkin, A.V. Osipov (2013) Anisotropy of the solid-state epitaxy of silicon carbide in silicon. Semiconductors 47(12):1551-1555. DOI: 10.1134/S1063782613120129. (link)

96. V.V. Ratnikov, A.E. Kalmykov, A.V. Myasoedov, S.A. Kukushkin, A.V. Osipov, L.M. Sorokin (2013) Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage. Technical Physics Letters 39(11):994-997. DOI: 10.1134/S1063785013110230. (link)

97. S.V. Kuz'michev, S.A. Kukushkin, A.V. Osipov (2013) Elastic interaction of point defects in crystals with cubic symmetry. Mechanics of Solids 48(4):431-438. (link)

98. L.M Sorokin, A.E. Kalmykov, A.V. Myasoedov, V.N. Bessolov, A.V. Osipov, S.A. Kukushkin (2013) Transmission electron microscopy study of semi-polar gallium nitride layer grown by hydride-chloride vapour-phase epitaxy on SiC/(001)Si heterostructure. Journal of Physics: Conference Series 471(012033). DOI: 10.1088/1742-6596/471/1/012033. (link)

99. S.A. Kukushkin, A.V. Osipov (2012) Theory of phase transformations in the mechanics of solids and its applications for description of fracture, formation of nanostructures and thin semiconductor films growth. Key Engineering Materials 528:145-164. DOI: 10.4028/www.scientific.net/KEM.528.145. (link)

100. S.A. Kukushkin, A.V. Osipov, S.G. Zhukov, E.E. Zavarin, W.V. Lundin, M.A. Sinitsyn, M.M. Rozhavskaya, A.F. Tsatsulnikov, S.I. Troshkov, N.A. Feoktistov (2012) Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide. Technical Physics Letters 38(3):297-299. DOI: 10.1134/S1063785012030261. (link)

101. S.A. Kukushkin, I.Yu. Tentilova, I.P. Pronin (2012) Mechanism of the phase transformation of the pyrochlore phase into the perovskite phase in lead zirconate titanate films on silicon substrates. Physics of the Solid State 54(3):611-616. DOI: 10.1134/S1063783412030158. (link)

102. S.A. Kukushkin, A.V. Osipov (2012) Thin-film heteroepitaxy by the formation of the dilatation dipole ensemble. Doklady Physics 57(5):217-220. (link)

103. A.V. Osipov, S.A. Kukushkin, N.A. Feoktistov, E.V. Osipova, N. Venugopalb, G.D. Vermab, Bipin Kumar Guptac, Anirban Mitra (2012) Structural and optical properties of high quality ZnO thin film on Si with SiC buffer layer. Thin Solid Films 520(23):6836–6840. DOI: 10.1016/j.tsf.2012.07.094. (link)

104. L.M. Sorokin, A.E. Kalmykov, V.N. Bessolov, N.A. Feoktistov, A.V. Osipov, S.A. Kukushkin, N.V. Veselov (2011) Structural characterization of GaN epilayers on silicon: Effect of buffer layers. Technical Physics Letters 37(4):326-329. DOI: 10.1134/S1063785011040158. (link)

105. S.A. Kukushkin, A.V. Osipov, E.V. Osipova, S.V. Razumov, A.V. Kandakov (2011) The optical constants of zinc oxide epitaxial films grown on silicon with a buffer nanolayer of silicon carbide Journal of Optical Technology 78(7):440-443. DOI: 10.1364/JOT.78.000440. (link)

106. V.N. Bessolov, S.A. Kukushkin, L.I. Mets, Yu.V. Zhilyaev, E.V. Konenkova, A.V. Osipov, L.M. Sorokin, N.A. Feoktistov, Sh. Sharofidinov, M.P. Shcheglov (2011) Aluminum and gallium nitrides on a silicon substrate with an intermediate silicon carbide nanolayer for ultraviolet devices. Journal of Optical Technology 78(7):435-439. DOI: 10.1364/JOT.78.000435. (link)

107. I.Yu. Tentilova, S.A. Kukushkin, E.Yu. Kaptelov, I.P. Pronin, V.L. Ugolkov (2011) Peculiarities of crystallization of thin ferroelectric films of lead zirconate titanate. Technical Physics Letters 37(2):163-165. DOI: 10.1134/S1063785011020295. (link)

108. L.M. Sorokin, A.E. Kalmykov, A.V. Myasoedov, N.V. Veselov, V.N. Bessolov, N.A. Feoktistov, A.V. Osipov and S.A. Kukushkin (2011) Structural characterization of GaN/AIN layers on 3C-SiC/Si(111) by TEM. Journal of Physics: Conference Series 326:012015. DOI: 10.1088/1742-6596/326/1/012015. (link)