Laboratory of Structural and Phase Transformations in Condensed Media

   Prof. Sergey Kukushkin, Head of lab
Dr. Andrey Osipov, Chief Researcher
Andrey Kandakov, engineer
Tatyana Lavrova, secretary of laboratory
Sergey Zhukov, engineer
Nikolay Feoktistov, engineer
Alexander Grashchenko, junior researcher
Rodion Telyatnik, junior researcher
Alexey Redkov, junior researcher
Vladimir Antipov, engineer

Contact Address:

Prof. Sergey A. Kukushkin
Head, Laboratory of structural and phase transitions in condensed media
Institute of Problems of Mechanical Engineering (Russian Academy of Sciences)
Bolshoj 61, Vas.Ostrov, St.Petersburg 199178, Russia
Fax: +7(812)321 4771

Email: sergey.a.kukushkin at gmail.com

Web-site: http://www.ipme.ru/ipme/labs/phase/lspt.html

Extended laboratory site: labspt.ru

Laboratory Research Activity Areas:

A. Development of the growth method of silicon carbide on silicon by substitution of atoms
B. Study of impact of external fileds on phase transitions
C. Nucleation theory

Current Research Projects:

  • Grant of Russian Science Foundation. Epitaxy of silicon carbide films on silicon by substitutional atoms to the growth of wide bandgap semiconductors (#14-12-01102).
  • Grant of Russian Foundation for Basic Research. Widegap semiconductor materials for power electronics, formed on silicon with the buffer layer of nano-SiC (# 16-29-03149)
  • Grant of Russian Foundation for Basic Research. Mechanisms of the synthesis of monocrystalline silicon carbide on silicon by the method of substitution of atoms (#15-03-06155)

Research facilities:

Laboratory governs the Unique scientific facility "Physics, mechanics and chemistry of crystals and thin films", which allows to study different properties of crystalline media. It consists of:
  • Ultraviolet ellipsometer J.A. Woollam VUV-VASE
  • Micro-Raman setup Witec Alpha 300R
  • Nanoindentor Nanotest 600
  • Ellipsometer J.A. Woollam M-2000RCE
  • AFM and STM EasyScan
  • Thin film stress-meter FLX-2320-S
  • Optical Profilometer Zygo NewView 6000

Full description: http://labspt.ru/oborud.html

Publications

Full list of publications and pdf's are available at: http://labspt.ru/publications.html

Monographs and Reviews

  1. Kukushkin S. A., Slyozov V. V. Disperse systems on the surfaces of the solids (evolutoion approach): mechanisms of formation of thin films, Nauka, Saint-Petersburg, 304p., 1996
  2. Kukushkin S. A., Osipov A. V. New phase formation on solid surfaces and thin film condensation, Progress in Surface Science , V. 51, 1, ISSN 0079-6816, PP.1-108, 1996
  3. Kukushkin S. A., Osipov A. V. Thermodynamics and kinetics of phase transitions of the first kind on the surfaces of solids, Khimicheskaya Fizika , V. 15, 9, P.5-104, 1996
  4. Kukushkin S. A., Osipov A. V. Processes of thin films condensation, Uspekhi phyzicheskih nauk, V. 168,10, P.1083-1116, 1998
  5. Kukushkin S. A., Osipov A. V. Nucleation kinetics of nano-films, Encyclopedia of Nanoscience and Nanotechnology. Edited H.S. Nalwa, USA 2004, V. 8, pp.113-136, ISBN 1-58883-001-2 .
  6. Kukushkin S. A., Osipov A. V. Nucleation and growth kinetics of nanofilms,The book "Nucleation theory and applications" , Edited by J.W.P. Schmelzer, Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim 2005, pp. 215-255.
  7. Kukushkin S. A., Osipov A. V. Phase transitions and nucleation of catalytic nanostructures under chemical, physical and mechanical factors, Kinetika i kataliz , v. 49, p.85-89, 2008
  8. Kukushkin S. A., A.V. Osipov, V.N. Bessolov, B.K. Medvedev, V.K. Nevolin, K.A. Tsarik. Substrates for epitaxy of gallium nitride: new materials and techniques, Reviews on Advanced Materials Science , v.16, 1, p.1-32 (2008)
  9. Kukushkin S. A., A.V. Osipov Theory of Phase Transformations in the Mechanics of Solids and Its Applications for Description of Fracture, Formation of Nanostructures and Thin Semiconductor Films Growth, Key Engineering Materials, vol. 528, p. 145-164, (2012)
  10. Kukushkin S. A., A.V. Osipov,N.A Feoktistov Chemical self-assembly of monocrystalline film: new method of directed nucleation: from theory to practice. Ros. Khim. Zhurnal , V. 57, p 32-64, 2013
  11. Kukushkin S. A., A.V. Osipov,N.A Feoktistov Synthesis of epitaxial silicon carbide films by method of atoms substitution in silicon crystalline lattice, Physics of the Solid State , V. 56, p 1457-1485, 2014
  12. Kukushkin S. A.,V.N. Bessolov E.V.Konenkova, A.V. Osipov S.N. Rodin Semipolar gallium nitride on silicon: technology and properties. Rev. Adv. Mater. Sci. 38, (2014), 75-93.
  13. Kukushkin S. A., A.V. Osipov Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films. J. of Phys. D: Appl. Phys. 47, 313001-313041 (2014).

Recent articles (2013-2016)

2016

  1. V. Bessolov, A.Kalmykov, E.Konenkova, S.Kukushkin, A.Myasoedov, N. Poletaev, S.Rodin Semipolar AlN and GaN on Si(100):HVPE technology and layer properties, Journal of Crystal growth (in press)
  2. S.А. Kukushkin, G.V. Benemanskaya, P.A. Dementev, S.N. Timoshnev, B. Senkovskiy Synchrotron-radiation photoemission study of the ultrathin Ba/3C–SiC (111) interface, Journal of Physics and Chemistry of Solids, 90 (2016) 40–44
  3. Antipov V. V., Kukushkin S. A., Osipov A. V. Epitaxial growth of cadmium sulfide films on silicon // Physics of the Solid State. 2016. V. 58. 3. P. 629-632, doi: 10.1134/S1063783416030033
  4. Kukushkin S. A., Osipov A. V. Phase equilibrium in the formation of silicon carbide by topochemical conversion of silicon //Physics of the Solid State 2016. V. 58. P. 747-751, doi: 10.1134/S1063783416040120
  5. Kukushkin S. A., Osipov A. V. Determining polytype composition of silicon carbide films by UV ellipsometry // Technical Physics Letters. 2016 V. 42-2-P. 175-178, doi: 10.1134/S1063785016020280
  6. Benemanskaya G. V., P.A. Dement'ev, S.A. Kukushkin, M.N. Lapushkin, B.V. Senkovskii, S.N. Timoshnev Induced surface states of the ultrathin Ba/3C-SiC (111) interface // Semiconductors 2016. V. 50. 4. P. 457-461. doi: 10.1134/S1063782616040072
  7. S. A. Kukushkin, A. V. Osipov, O. N. Sergeeva , D. A. Kiselev, A. A. Bogomolov, A. V. Solnyshkin, E. Yu. Kaptelov, S. V. Senkevich, I. P. Pronin , “Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate”, // Physics of the Solid State . 2016. V. 58. 5. P. 967-970, doi: 10.1134/S1063783416050139
  8. S. A. Kukushkin , A. V. Osipov, R. S. Telyatnik ,” Elastic interaction of point defects in cubic and hexagonal crystals”, //Physics of the Solid State 2016. V. 58. 5. P. 971-980, doi: 10.1134/S1063783416050140 (link)
  9. Redkov A.V., Kukushkin S. A., Osipov A. V. Molecular Dynamics Simulation of the Indentation of Nanoscale Films on a Substrate // Technical Physics Letters 2016. V. 42. 6.P . 639-643, doi: 10.1134/S1063785016060274
  10. V.N. Bessolov, D.V. Karpov, E.V. Konenkova, A.А. Lipovskii, A.V. Osipov, A.V. Redkov, I.P. Soshnikov, S.A. Kukushkin. Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate. // Thin Solid Films, 606, p. 74-79, 2016, doi:10.1016/j.tsf.2016.03.034
  11. A.V. Redkov, A.V. Osipov, I.S. Mukhin, A.V. Redkov. "Separation of stress-free AlN/SiC thin films from Si substrate", Journal Of Physics: Conference Series, (in press)
  12. Kukushkin S. A., Osipov A. V., Romanychev A.I. Epitaxial growth of zinc oxide by method of molecular lamination in SiC/Si substrates // Physics of the Solid State 2016. V. 58. 7. P. 1398-1402 (in russian)
  13. S.A. Kukushkin, V.I. Nikolaev, A.V. Osipov, E.V. Osipova, A.I. Pechnikov, N.A. Feoktistov. Epitaxial gallium oxide on SiC/Si substrates//Physics of the Solid State, 2016, V 58 (9), 1812-1817.(in russian)
  14. R.R. Reznik, K.P. Kotlyar, I.V. Il'kiv, I.P. Soshnikov, S.A. Kukushkin, A.V. Osipov, E.V. Nikitina, G.E. Cyrlin. Growth and optical properties of GaN nanowires grown on hybride substrate SiC/Si // Physics of the Solid State , 2016, v 58, (in press, in russian)
  15. G.V. Benemanskaya, P.A. Dement'ev, S.A. Kukushkin, M.N. Lapushkin, A.V. Osipov, S.N. Timoshnev Photoemission study of vicinal surface of SiC (100) and interface Cs/SiC(100)// Technical Physics Letters , 2016, v 42 (in press, in russian)

2015

  1. L.M. Sorokin, A.V. Myasoedov, A.E. Kalmykov, D.A. Kirilenko, V.N. Bessolov and S. A. Kukushkin. TEM investigation of semipolar GaN layers grown on Si(001) offcut substrates.// Semicond. Sci. Technol. 30 (2015) 114002 (6pp) 10.1088/0268-1242/30/11/114002
  2. A.V. Redkov, S.A. Kukushkin, and A.V. Osipov. Surface defects formation on strained thin films growing via chemical reaction: a model.// Journal of Physics: Conference Series 643 (2015) 012005 10.1088/1742-6596/643/1/012005
  3. A.V. Redkov, A.V. Osipov, S.A. Kukushkin. Stability of the surface of an elastically strained multicomponent film in a system with chemical reactions// Physics of the Solid State , (2015), V 57, p.2469-2474.
  4. N.A. Feoktistov, S.A. Grudinkin, V.G. Golubev, M.A. Baranov, K.V. Bogdanov, C.A. Kukushkin. Evolution of morphology of diamond particles and mechanisms of t chemical reactions (in russian)// Physics of the Solid State , (2015), V 57, p.2451-2457.
  5. C.A. Grudinkin, V.G. Golubev, A.V. Osipov, N.A. Feoktistov, S.A. Kukushkin. Infrared spectroscopy of SiC layers sintered by substitution of atoms on the surface on monocrystalline silicon heir growth during vapour-phase deposition process // Physics of the Solid State , (2015),V 57, p.2125-2130. 10.1134/S1063783415110104
  6. V.N. Bessolov, A.S. Grashchenko, E.V. Konenkova, A.V. Myasoedov, A.V. Osipov, A.V. Red'kov, S.N. Rodin, V.P. Rubec, S.A. Kukushkin. Impact of n- and p-type of conductivity of Si(100) substrate with buffer layer of SiC on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN (in russian) // Physics of the Solid State, 2015, V 57, p. 1916-1921. 10.1134/S1063783415100042
  7. S.A. Kukushkin, A.V. Osipov, M.M. Rozhavskaya, A.V. Myasoedov, S.I. Troshkov, V.V. Lundin, L.M. Sorokin, A.F. Cacul'nikov. Growth and structure of GaN layers, grown on SiC, sintered on Si substrate by the atom substitution method: the model of V-defect formation during GaN growth (in Russian)// Physics of the Solid State , 2015, V 57, p. 1850-1858. 10.1134/S1063783415090218
  8. A.S. Grashchenko, S.A. Kukushkin, A.V. Osipov. Microhardness study of two-layer nanostructutes by the nanoindentation method// Materials Physics and Mechanics (2015), 24, p.35-40.
  9. O.N. Sergeeva, A.A. Bogomolov, A.V. Solnyshkin, N.V. Komarov, S. A. Kukushkin, D.M. Krasovitsky, A.L. Dudin, D.A. Kiselev, S.V. Ksenich, S.V. Senkevich, E.Yu. Kaptelov and I.P. Pronin. SEM, Dielectric, Pyroelectric, and Piezoelectric Response of Thin Epitaxial AlN Films Grown on SiC/Si Substrate// Ferroelectrics (2015) 477:1, 121-130, DOI: 10.1080/00150193.2015.1000144.
  10. G.V. Benemanskaya, P.A. Dementev, S.A. Kukushkin, M.N. Lapushkin, A.V. Osipov, B. Senkovskiy, S.N. Timoshnev. Photoemission Study of nano SiC Epitaxial layers synthesized by a New method of the Atom Substitution in Si Crystal lattice// Materials Physics and Mechanics 22 (2015) 183-190.
  11. A.V. Tumarkin, S.A. Kukushkin, A.V. Osipov, A.S. Ankudinov, A.A. Odinec. The role of elastic energy in the formation of segnetoelectric films of barium-stroncium titanate on sapphire (in russian)// Physics of the Solid State, (2015), V 57,p.796-801.
  12. Kukushkin S.A., Osipov A.V. Equilibrium state in the system of Si-O-C during the growth of SiC by the method of chemical substitution of atoms (in russian)// Technical Physics Letters, 2015,V 41,p.1-9.
  13. R.S. Telyatnik, A.V. Osipov, S.A. Kukushkin. Pore-and delamination-induced mismatch strain relaxation and conditions for the formation of dislocations, cracks, and buckles in the epitaxial AlN (0001)/SiC/Si (111) (in russian) // Physics of the Solid State , (2015), V 57, p.153-162.

2014

  1. V.N. Bessolov, E.V. Konenkova, A.V.Zubkova, A.V. Osipov, T.A. Orlova, S.N. Rodin, S.A. Kukushkin. The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthesized on SiC/Si(111) and SiC/Si(100) heterostructures// Materials Physics and Mechanics 21, № 3, (2014) 266-274.
  2. A.S. Grashchenko, Kukushkin S.A., Osipov A.V. Nanoindentation and deformation properties of nanoscale silicon carbide on silicon (in russian)// Technical Physics Letters, 2014, V 40, p.53-59.
  3. S.A. Kukushkin, A.V. Osipov, A.V. Red'kov. Morphological stability criterion for a spherical crystallization front in a multicomponent system with chemical reactions (in russian) // Physics of the Solid State , V. 56, (2014), p.2440-2445.
  4. V.N. Bessolov E.V. Konenkova, S.A. Kukushkin, A.V. Osipov S.N. Rodin. Semipolar gallium nitride on silicon: technology and properties. // Rev. Adv. Mater. Sci. 38, (2014), 75-93.
  5. V.N. Bessolov, E.V. Konenkova, S.A. Kukushkin, A.V. Myasoedov, S.N. Rodin, A.V. Osipov, M.P. Shcheglov. Semipolar GaN on Si (001): The role of SiC buffer layer synthesized by method of substrate atom substitution// Materials Physics and Mechanics 21 (2014) 71-77.
  6. V.N. Bessolov, E.V. Konenkova, S.A. Kukushkin, A.V. Myasoedov, A.V. Osipov, S.N. Rodin, M.P. SHCHeglov, N.A. Feoktistov. Epitaxy of semipolar GaN on Si(001) substrate with buffer layer of SiC (in russian)// Technical Physics Letters, 2014, V 40, p.48-54.
  7. S.A. Kukushkin, A.V. Osipov. A new method of replacement atoms for the synthesis of epitaxial layers of SiC on Si: From theory to practice// Journal of Physics: Conference Series 541 (2014) 012003, p.1-9.
  8. S.A. Kukushkin and A.V. Osipov. Topical Review. Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films. // J. of Phys. D: Appl. Phys. 47, 313001-313041 (2014).
  9. S.A. Kukushkin, A.V. Osipov, N.A. Feoktistov. Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review (in russian)// Physics of the Solid State V. 56, (2014), p. 1457-1485.
  10. S.A. Kukushkin, A.V. Osipov. Phase transition of the first kind through the intermediate state// Physics of the Solid State V. 56, (2014), p. 761-768.
  11. S.A. Kukushkin, A.V. Luk'yanov, A.V. Osipov, N.A. Feoktistov Epitaxial silicon carbide on 6-inch silicon substrate (in russian) // Technical Physics Letters , V. 40, (2014) p.71-79.

2013

  1. L. M Sorokin, A. E. Kalmykov, A. V. Myasoedov, V. N. Bessolov, A. V. Osipov and S. A. Kukushkin. Transmission electron microscopy study of semi-polar gallium nitride layer grown by hydride-chloride vapour-phase epitaxy on SiC/(001)Si heterostructure// Journal of Physics: Conference Series 471 (2013) 012033-012033.
  2. V. N. Bessolov, Yu. V. Zhilyaev, E. V. Konenkova, S. N. Rodin, N. V. Seredova, N. A. Feoktistov, M. P. Shcheglov, A. A. Efimov, S. A. Kukushkin, A. V. Osipov. Hloride-hydride epitaxy of semipolar GaN(2023) layers on Si(100) (in russian)// Rossijskij himicheskij zhurnal, (2013) V.57, p.133-137.
  3. S.A. Kukushkin, A.V. Osipov, N.A. Feoktistov. Chemical self-assembly of monocrystalline SiC film on silicon substrate: new method of directed nucleation (in russian)// Rossijskij himicheskij zhurnal , (2013), V. 57, p.36-47.
  4. S.A. Kukushkin, S. V. Kuz'michev, A.V. Osipov Elastic interaction of point defects in crystals with cubic symmetry (in russian)// Mechanics of Solids , №4, (2013). p. 90-99.
  5. Ratnikov V.V., Kalmykov A.E., Myasoedov A.V., Kukushkin S.A., Osipov A.V., Sorokin L.M. Subsequent charaterization of structer of the layers in the system of GaN/AlN/SiC/Si(111) by means of x-ray difractometry after each study of growth (in russian)// Technical Physics Letters, V. 39, (2013) p.25-32.
  6. S.A. Kukushkin, A.V. Osipov Anisotropy of the solid-state epitaxy of silicon carbide in silicon // Semiconductors, V. 47, (2013) p.1575-1579
  7. S.A. Kukushkin, A. V. Osipov. A new method for the synthesis of epitaxial layers of silicon carbide on silicon owing to formation of dilatation dipoles // J. Appl. Phys, vol.113, 2, P. 4909-1-4909-7 (2013).
  8. Vasily Bessolov, Elena Konenkova, Mikhail Shcheglov, Shukrillo Sharofidinov, Sergey Kukushkin, Andrey Osipov, Vladimir Nikolaev, HVPE growth of GaN in the semipolar direction on planar Si(210) // Physica status solidi , (2013). C 10, No. 3, 433–436.
  9. S.A. Kukushkin, A.V. Osipov, S.A. Obuhov, D.B. Vcherashnij, N.A. Feoktistov, Mobility of the charge carriers in non-alloyed layers of SiC, grown by the method of solid-state epitaxy (in russian) // Technical Physics Letters, V. 39, (2013) p.81-88.
  10. V.N. Bessolov, E.V. Konenkova, S.A. Kukushkin, V.I. Nikolaev, A.V. Osipov, SH. SHarofidinov, M.P. SHCHeglov. Epitaxy of GaN in semipolar direction on the Si(210) substrate (in russian) // Technical Physics Letters, (2013), V 39, p.1-8.
  11. S.A. Kukushkin, A.V. Osipov. New mechanism of growth of relaxation of elastic energy during heteroepitaxy of monocrystalline films: interaction of point defects and dilatation dipoles// Mechanics of Solids, №2, (2013). №2, s. 122-136.

2012

  1. A.V. Osipov, S.A. Kukushkin, N.A. Feoktistov, E.V. Osipova, N. Venugopalb, G.D. Vermab, Bipin Kumr Guptac, Anirban Mitra. Structural and optical properties of high quality ZnO thin film on Si with SiC buffer layer// Thin Solid Films. (2012), Vol. 520. №23, p. 6836–6840.
  2. S.A. Kukushkin and A. V. Osipov. Theory of Phase Transformations in the Mechanics of Solids and Its Applications for Description of Fracture, Formation of Nanostructures and Thin Semiconductor Films Growth// Key Engineering Materials . (2012), vol. 528, p. 145-164.
  3. S.A. Kukushkin, A.V. Osipov. Heteroepitaxy of thin films via formation of ensemble of dilatation dipoles (in russian) // DAN , (2012), V. 444, p. 266–269.
  4. S.A. Kukushkin, I.YU. Tentilova, I.P. Pronin. Mechanism of the phase transformation of the pyrochlore phase into the perovskite phase in lead zirconate titanate films on silicon substrates // Physics of the Solid State . (2012), V. 54, p. 571-575.
  5. S.A. Kukushkin, A.V. Osipov, S.G. ZHukov, E.E. Zavarin, V.V. Lundin, M.A. Sinicyn, M.M. Rozhavskaya, A.F. Cacul'nikov, S.I. Troshkov, N.A. Feoktistov. Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide // Technical Physics Letters , (2012), V.38, p.90-95.

2011

  1. L.M. Sorokin, A. E. Kalmykov, A. V. Myasoedov, N. V. Veselov, V. N. Bessolov, N. A. Feoktistov, A. V. Osipov and S. A. Kukushkin. Structural characterization of GaN/AIN layers on 3C-SiC/Si(111) by TEM // Journal of Physics: Conference Series , V. 326, № 012015, p.1-4, Bristol, UK, 2011.
  2. I.YU. Tentilova, S.A. Kukushkin, E.YU. Kaptelov, I.P. Pronin, V.L. Ugolkov. Peculiar properties of crystallization process of thin segnetoelectric films of plumbub circonate-titanate (in russian)// Technical Physics Letters , (2011), V.37, p.37-43.
  3. V.N. Bessolov, YU.V. ZHilyaev, E.V. Konenkova, L.M. Sorokin, N.A. Feoktistov, SH. SHarofidinov, M.P. SHCHeglov, S.A. Kukushkin, L.I. Mets, A.V. Osipov. Aluminum and gallium nitrides on silicon substrate with intermediate layer of silicon carbdie for ultraviolet devices (in russian)// Opticheskij zhurnal , (2011), V 78, p.23-28.
  4. S.A. Kukushkin, A.V. Osipov, E.V. Osipova, S.V. Razumov, A.V. Kandakov. Optical constants of epitaxial films of zinc oxide, grown on silicon with buffer layer of silicon carbide// Opticheskij zhurnal , (2011), V.78, p. 29-33.
  5. L.M. Sorokin, A.E. Kalmykov, V.N. Bessolov, N.A. Feoktistov, A.V. Osipov, S.A. Kukushkin, N.V. Veselov. Characterization of the structure of epitaxial layers of GaN on silicon: impact of buffer layers (in russian) // Technical Physics Letters , (2011), V.37, p.72-79

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Last updated  10 July 2016