We propose a model of passive mode-locking laser diode based on quantum wells.
Numerical results for InGaAlAs/InGaAs/InP heterostructure with 4 quantum wells in active
region are presented. The dynamics of the transition to mode-locking has been investigated. It
has been shown that mode-locking occurs approximately within 30 ns. The pulse duration was
amounted to 2 ps, average output power - to 9.4 mW. The appearance of the second harmonic
radiation in the resonator is connected to the insufficient absorber relaxation rate
Keywords: passive mode-locked laser; InGaAlAs/InGaAs/InP heterostructures; simulation operation regimes.
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