New type of carbon based nanostructure on the vicinal 3C-SiC(111)-4œ and 3CSiC(111)-8œ
surfaces with adsorbed Ba and Cs nanolayers has been found. The 3C-SiC(111)-
4œ (8œ) samples were grown by low-defect unstressed nanoscaled films epitaxy method on
silicon vicinal substrates. Electronic structure of the 3C-SiC(111)-4œ (8œ) surfaces and the (Ba,
Cs)/3C-SiC(111)-4œ (8œ) interfaces has been detailed studied in situ in an ultrahigh vacuum by
synchrotron-based photoelectron spectroscopy. The C 1s, Si 2p, Ba 4d core levels and valence
band spectra were investigated as a function of Ba or Cs submonolayer coverages. A special
fine structure of the C 1s core level spectrum was revealed to appear under Ba and Cs adsorption
on the vicinal SiC surface only. Drastic change in the C 1s spectrum was ascertained and shown
to be originated from the interacting Si vacancy and adsorbed Ba (Cs) atoms initiating both the
electron redistribution and surface reconstruction effects with formation of a new type of the
C-enriched graphitic-like nanostructure.
Keywords: : silicon carbide on silicon; wide bandgap semiconductors; thin film epitaxy; carbonbased nanostructure; vicinal 3C-SiC(111) surfaces; absorbed Ba and Cs nanolayers; electronic structure.
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