Mater.Phys.Mech.(MPM)
No 3, Vol. 24, 2015, pages 284-288

MOLECULAR BEAM EPITAXY GROWN STRAINED HETEROSTRUCTURES FOR
ACTIVE REGION OF LASER DIODE WITH EMISSION WAVELENGTH 1520-1580 NM

A.V. Babichev, A.S. Kurochkin, E.S. Kolodeznyi, A.G. Gladyshev,
I.I. Novikov, L.Ya. Karachinsky, A.Yu. Egorov

Abstract

We describe strained semiconductor heterostructures InGaAlAs/InGaAs/InP fabricated by molecular beam epitaxy and designed for active region of laser diode with emission wavelength 1520-1580 nm. Structural and optical properties of the strained semiconductor heterostructures InGaAlAs/InGaAs/InP were studied by X-ray diffraction and photoluminescence analysis. We confirm the possibility to use strained semiconductor heterostructures InGaAlAs/InGaAs/InP for active region of laser diode with 1.6 % lattice mismatch between InGaAs quantum wells and InP substrate.

Keywords: laser diode; wavelength 1520-1580 nm; molecular beam epitaxy; strained heterostructures; structural properties; optical properties.

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