| Nano - structured layers were prepared in Czochralski silicon by co - implantation with H2+ (dose, D = 1.25 - 2.5x1016 cm-2, energy, E = 135 keV) and He+ (D = 2.5 - 5x1016 cm-2, E = 50 - 150 keV) and subsequent high temperature (at up to 1070K) - high pressure (at up to 1.1 GPa) treatment in hydrostatic conditions. Depending on implantation and treatment parameters, the sponge - like buried layers composed of silicon nano - crystals and of amorphous silicon, with hydrogen / helium filled cavities and platelets / bubbles, are created. Such layers indicate specific microstructure and hydrogen emission, increasing with temperature and sometimes with pressure. |
full paper (pdf, 304 Kb)