Rev.Adv.Mater.Sci. (RAMS)
No 2, Vol. 20, 2009, pages 187-189

NON-MONOTONIC CHANGES OF SILICON MICROHARDNESS
RADIATION-INDUCED WITH LOW-FLUX OF ELECTRONS

Alexander A. Dmitrievskiy, Nadezhda Yu. Suchkova,
Vladimir M. Vasyukov and Maxim Yu. Tolotaev

Abstract

The multistage process of silicon radiation defects (RD) modification (accompanied by non-monotonic change of mechanical properties) in conditions of irradiation with low-flux (I = 105 cm-2s-1) is discussed. A qualitative model of quasi-chemical reactions which product is a cluster V2-O-C, responsible for the first maximum of softening, is offered.

full paper (pdf, 40 Kb)