POSITION AND SIZE CONTROLLED FABRICATION OF NANO-METALS AND
Kazuo Furuya, Kazutaka Mitsuishi, Masayuki Shimojo and Masaki Takeguchi
-SEMICONDUCTORS WITH FINE FOCUSED ELECTRON BEAM
National Institute for Materials Science (NIMS), 3-13 Sakura, Tsukuba, Ibaraki 305-0003, Japan
Nanofabrication with fine focused electron beam was reviewed, and position and size
controlled fabrication of nano-metals and -semiconductors are demonstrated. The nanowire of
GaAs was shown to have an about 3 nm in diameter. We have discovered that Si nanocrystals
with 2 to 3 nm can be formed in a SiO2 thin film
under irradiation of an electron beam 4.108
C/m2 at 850K. An array of the Si nanocrystal dots was also fabricated using this method.
Similarly, when decomposable gases such as W(CO)6 were introduced at the beam irradiated
areas, nano-metal islands are formed depending upon the beam diameter and the exposure time.
The diameter of the dots was reduced to about 3.5 nm with the FE-STEM, while those were
limited to about 15 nm in diameter with the FE-SEM. Self-standing structures were
full paper (pdf, 256 Kb)