Rev.Adv.Mater.Sci. (RAMS)
No 1, Vol. 38, 2014, pages 75-93


V.N. Bessolov, E.V. Konenkova, S.A. Kukushkin, A.V. Osipov and S.N. Rodin


This review represents the last achievements in synthesis of epitaxial layers of gallium nitride (GaN) on silicon (Si) substrate. The basic physical, crystallography and physical-chemical properties of semipolar gallium nitride are described. The possible use of semipolar gallium nitride in production of devices for opto- and microelectronics is discussed. The methods of synthesis of semipolar GaN layers are considered with an emphasis on their advantages and drawbacks. Considerable attention is given to the original method of synthesis of semipolar GaN on planar Si(100), Si(210) substrates with interlayers of SiC and AlN. It is based upon the synthesis of thin SiC-layers on the surface Si(100) or Si(210) using the new method of atom substitution. Such an approach makes possible the epitaxial layers of the semipolar GaN to be synthesized on the Si substrate with deflection of the layer from the Si(100) plane by an angle ~ 55 and with a half-width of the X-ray diffraction rocking curve of GaN(1-101) of the order ω0~20'.

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