No 1, Vol. 4, 2003 


G.Kiriakidis, H. Ouacha and N. Katsarakis

Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas,
P.O. Box 1527, Vasilica Vouton, 71110 Heraklion, Crete, Greece


The electrical and ozone sensor response characteristics of indium oxide, prepared by dc sputtering, are reviewed in this work. The electrical conductivity of these films is compared to those obtained from other deposition techniques, and found to depend upon the synthesis technique and the deposition parameters. Our sputtered-InOx films exhibit conductivity changes of up to seven orders of magnitude under the processes of photoreduction and oxidation. A conductivity value of (σ = 1.5 x 102 Ω-1cm-1 has been achieved at room temperature, which provides the possibility to use this material as interconnect in ICs and as a sensor at ambient conditions without additional heating. The sensing properties towards ozone of these films are also investigated. Optimum operating temperatures have been found where the response to ozone of InOx is greater and stable. The best performance of the sensitivity of our films is found at room temperature, and is of the order of 4 x 106. This can be applied in promoting them as promising gas sensor devices for ozone operating at ambient conditions.

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